Abstract
In this paper, a 5.7kV 4H-SiC Junction Barrier Schottky diode(JBS) with non-uniform field limiting rings termination is simulated and fabricated successfully based on a epitaxial thickness of 49μm and the doping concentration about 1.04×1015cm-3 respectively. The reverse breakdown voltage could reach to 5.7kV at least at reverse current of 200μA. And the on-state voltage is 3V at the forward current of 2A, corresponding to an on-resistance of 32mΩ•cm2. The corresponding figure-of- merit of VB2/ RSP-ON for our fabricated device is 1.026 GW/cm2, which is closing to the optimal levels among several reported SiC JBS.
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