Abstract
We have employed p-AlGaAs barriers in the Single Quantum Well-Separate Confinement Heterostructure-Laser Diode (SQW-SCH-LD) numerically. The optoelectronic properties of the diode are found to be improved. This is due to the higher active zone carrier radiative recombination, lower p-side electron leakage, and higher hole injection. The threshold current density at which lasing starts is lowered from ∼1133 A/cm2 to ∼637 A/cm2 in the suggested device employing p-AlGaAs barriers.
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