Abstract
We report on the performance of organic field-effect transistors (OFETs) by using a series of angular-shaped naphthalene tetracarboxylic diimides as active layers. The fabricated OFET devices exhibit n-type semiconducting characteristics. The performance of OFETs can be substantially improved by modifying the surface of the gate dielectric chemically prior to the deposition of the organic semiconductors. An increased electron mobility of the OFETs was found owing to the improved crystallinity and enlarged grain sizes, which are attributed to the elevating substrate temperature during the semiconductor deposition. The highest mobility of 0.515cm2/Vs was achieved from a device fabricated at substrate temperature of 130°C with octadecyltrichlorosilane (OTS) surface modification.
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