Abstract
We report the fabrication of high performance MoTe2/Si heterojunction photodiodes by direct growth of MoTe2 patterns on a commercial Si substrate by a feasible chemical vapor deposition method. The devices exhibit an ultrafast response speed with a rise/fall time of 5/8 μs, a broadband (400–1550 nm) photoresponse, a high on/off ratio of ∼104, and self-powered photo-detection with a zero bias responsivity of 0.26 A W−1 and a detectivity of 2 × 1013 Jones at 700 nm wavelength. The devices further show high stability in air for one month. This investigation offers the feasibility to fabricate high performance MoTe2/Si photodiodes for future vital optoelectronic applications.
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