Abstract
An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT) is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vg<VFB, the intrinsic graphene changes into p-type, so graphene contact can achieve lower off current by lowering the Fermi level. To further improve the performance of MoS2 TFT, a new method using graphene contact first and MoS2 layer last process that can avoid PMMA residue and high processing temperature is applied. MoS2 TFT using this method shows on/off current ratio up to 6×106 order of magnitude, high mobility of 116 cm2/V-sec, and subthreshold swing of only 0.515 V/dec.
Highlights
Moore’s Law had led the development trend of semiconductor devices and kept the transistor scaling in the past fifty years
transition metal dichalcogenides (TMDCs) are the promising materials to solve this problem with its one atomic layer thickness TFTs which are immune to short channel effects
At high processing temperature MoS2 will oxidize and decompose into MoO3 and SO2, this may degrade the performance of MoS2 TFTs
Summary
Moore’s Law had led the development trend of semiconductor devices and kept the transistor scaling in the past fifty years. High performance MoS2 TFT using graphene contact first process The mobility of MoS2 TFTs using graphene contact showed just little difference from that using metal contact.[10,11,12] In order to further improve the performance of
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