Abstract
Microstructure is important to the development of energy devices with high performance. In this work, a three-dimensional Si-based metal-insulator-metal (MIM) capacitor has been reported, which is fabricated by microelectromechanical systems (MEMS) technology. Area enlargement is achieved by forming deep trenches in a silicon substrate using the deep reactive ion etching method. The results indicate that an area of 2.45 × 103 mm2 can be realized in the deep trench structure with a high aspect ratio of 30:1. Subsequently, a dielectric Al2O3 layer and electrode W/TiN layers are deposited by atomic layer deposition. The obtained capacitor has superior performance, such as a high breakdown voltage (34.1 V), a moderate energy density (≥1.23 mJ/cm2) per unit planar area, a high breakdown electric field (6.1 ± 0.1 MV/cm), a low leakage current (10−7 A/cm2 at 22.5 V), and a low quadratic voltage coefficient of capacitance (VCC) (≤63.1 ppm/V2). In addition, the device’s performance has been theoretically examined. The results show that the high energy supply and small leakage current can be attributed to the Poole–Frenkel emission in the high-field region and the trap-assisted tunneling in the low-field region. The reported capacitor has potential application as a secondary power supply.
Highlights
Metal-Insulator-Metal (MIM) capacitors, which are typical passive components, have been widely used for radio-frequency decoupling and analog mixed signal integrated circuits applications [1,2,3,4,5,6,7,8] due to their low parasitic capacitance and low resistivity electrode [6,9]
A typical application for a secondary power supply is as an ignition device, for which some key parameters, including moderate energy density and excellent power density combined with high capacitance density, a high breakdown voltage, and a low leakage current, are required
It is clear that high capacitance density can be achieved by using a high-k dielectric and low dielectric thickness according to the operating principle of planar capacitors
Summary
Metal-Insulator-Metal (MIM) capacitors, which are typical passive components, have been widely used for radio-frequency decoupling and analog mixed signal integrated circuits applications [1,2,3,4,5,6,7,8] due to their low parasitic capacitance and low resistivity electrode [6,9]. A typical application for a secondary power supply is as an ignition device, for which some key parameters, including moderate energy density and excellent power density combined with high capacitance density, a high breakdown voltage, and a low leakage current, are required. It is clear that high capacitance density can be achieved by using a high-k dielectric and low dielectric thickness according to the operating principle of planar capacitors This way can result in a low breakdown voltage according to the empirical relation [11] and the electric field strength equation. We found that the fabricated MIM capacitors show a large breakdown voltage, a low leakage current, moderate energy density, and small capacitance variation, which largely benefit secondary power supply applications
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