Abstract
We demonstrate high-performance mid-wavelength p-i-n infrared detectors based on InAs/GaSb type-II superlattices (SLs) grown by a production-scale metalorganic chemical vapor deposition system. Through a specially-designed gas switching sequence and the use of GaAs-type of interfacial layers, strain-balanced SLs with excellent material quality were obtained, as evidenced by atomic force microscopy, photoluminescence, X-ray diffraction, and transmission electron microscopy. The processed devices, with a cutoff wavelength around 4.8 μm, exhibited a R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> A of 2.3×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> Ωcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a peak responsivity of 1.4 A/W at 77 K. A specific detectivity of 7.2×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cmHz1/2/W was achieved at 3.7 μm. These values are comparable with those reported for InAs/GaSb SL detectors with similar cutoff wavelengths grown by molecular beam epitaxy.
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