High-performance mid-infrared photodetection based on Bi2Se3 maze and free-standing nanoplates

Abstract

The pursuit of optoelectronic devices operating in mid-infrared regime is driven by both fundamental interests and commercial applications. The narrow bandgap (0.3 eV) of layered Bi2Se3 makes it a promising material for mid-infrared photodetection. However, the weak absorption of mid-infrared optical power and high dark current level restrict its performance. Here, a supply-control technique is applied to modulate the growth mode of Bi2Se3 crystal, and Bi2Se3 crystals with various morphologies are obtained. The nanoplates pattern transits from maze to freestanding when source mass was tuned. Due to the strong infrared absorption and photoelectric conversion efficiency of vertical Bi2Se3 nanoplates, the as-prepared vertical Bi2Se3 nanoplates/Si heterojunction shows excellent photoresponse and extremely low dark current. Among these devices based on different Bi2Se3 morphologies, freestanding nanoplates show the optimal mid-infrared characteristics, namely a photo-to-dark ratio of 2.0 × 104, a dark current of 0.21 pA, a response time of 23 ms, a specific detectivity of 6.1 × 1010 Jones (calculated) and 1.2 × 1010 Jones (measured) under 2.7 μm illumination and at room temperature. Notably, the specific detectivity of our devices are comparable to commercial InGaAs photodetectors. With the tunable- morphology growing technique and excellent photoresponding characteristics, Bi2Se3 nanomaterials are worth attention in optoelectronic field.