Abstract
This paper describes recent developments in silicon high-voltage, high-power microwave static induction transistor (SIT) technology. We have developed SITs which are capable of cw output power levels greater than 100W in the 200 MHz to 400 MHz frequency band and 25W in the 900 MHz to 1200 MHz frequency band at 120V dc operating voltage. These SITs demonstrate the highest performance with respect to the combination of power, frequency, gain, efficiency and bias voltage of any semiconductor device reported to date. Un addition to describing two dimensional modeling, the processing sequence and high frequency characterization techniques will be outlined. Also, an improved SIT geometry, the Recessed Gate SIT (RGSIT), will be introduced.
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