Abstract
Inspired by the neural network of the human brain, neuromorphic emulation for memorizing and processing data using electronic devices has attracted widespread intention. The conductance of memristor device can be changed by the charge flowing through it, which is analogical to the variation of synaptic plasticity with the applied external stimulation. However, the high switch voltage and inferior stability of memristor limit the further application to the imitation of biological synapse. Here, a memristor based on large-area MoS2 with vertical structure Al/MoS2/Cu is constructed, which is deposited by magnetron sputtering system on aluminum foil. The memristor presents superior stability and robustness, and has a small set and reset voltages with narrow variation distribution. More importantly, by applying relevant pulse sequence, the essential synaptic behaviors are mimicked by using the memristor based on MoS2, including paired-pulse facilitation (PPF) and spiking-time-dependent plasticity (STDP), etc.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
