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Abstract
High quality (In)GaAs/AlGaAs HEMT layers were grown with a long-term reproducibility of ±1%. The control of growth rates and doping levels is based on calibration layers and the predictable behaviour of the effusion sources. Lateral homogeneity of the heterostructures grown on 3 inch epiready substrates is about ±1% with respect to layer thickness, alloy composition and doping. Defect density is routinely below 100cm -2. Low noise GaAs/AlGaAs HEMTs (gate length 0.3μm) fabricated from these epilayers using optical lithography, selective dry etching and full dielectric passivation reveal excellent device characteristics (noise figures at 12 GHz and 0.60 dB (on wafer: gain 10 dB); 0.75 dB (in commercial ceramic package: gain 11 dB)).
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