Abstract
Magnetic tunnel junctions (MTJs) have attracted tremendous interests recently because of their potential application in magnetoresistive random access high-density memory and magnetic sensor. However, the performance of them is far from satisfying due to the various problems exist in tunnel barrier materials. Here, we propose to use two-dimensional (2D) Bi2O2Se material, which is advantageous in reducing the MTJ size, as the tunnel barrier, and demonstrate that it is able to generate very large tunnel magnetoresistance (TMR) when integrated with CoFe electrodes. The underlying mechanism is elaborated by analyzing the band structures, electron transmission and interface properties. These results provide important guidance for designing high-density and high-performance MTJs.
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