High-Performance Lateral Nanowire InGaAs MOSFETs With Improved On-Current

Abstract

We report on In0.85Ga0.15As MOSFETs utilizing selectively grown lateral nanowires as the channel. These devices exhibit ON-current of $I_{\mathrm{\scriptscriptstyle ON}} = 565~\mu \text{A}/\mu \text{m}$ at $I_{{\mathrm{\scriptscriptstyle OFF}}} =100$ nA/ $\mu \text{m}$ and $V_{\mathrm{ DD}}=0.5$ V, which is higher than all other reported values for III–V FETs. This is enabled by a transconductance of 2.9 mS/ $\mu \text{m}$ and a minimum SSsat of 77 mV/decade. A ballistic top-of-the-barrier model is used to model these devices and to predict their ultimate performance, which is approximately twice that of the fabricated devices.