High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors**Project supported by the National Natural Science Foundation of China (Grant Nos. 61574003 and 61774010) and Shenzhen Municipal Scientific Program, China (Grant Nos. GGFW20170728163447038 and JCYJ20180504165449640)

Abstract

This work reports on the integration of organic and inorganic semiconductors as heterojunction active layers for high-performance ambipolar transistors and complementary metal-oxide-semiconductor (CMOS)-like inverters. Pentacene is employed as a p-type organic semiconductor for its stable electrical performance, while the solution-processed scandium (Sc) substituted indium oxide (ScInO) is employed as an n-type inorganic semiconductor. It is observed that by regulating the doping concentration of Sc, the electrical performance of the n-type semiconductor could be well controlled to obtain a balance with the electrical performance of the p-type semiconductor, which is vital for achieving high-performance inverters. When the doping concentration of Sc is 10 at.%, the CMOS-like logic inverters exhibit a voltage gain larger than 80 and a wide noise margin (53% of the theoretical value). The inverters also respond well to the input signal with frequency up to 500 Hz.