High-performance inverted organic light-emitting diodes with extremely low efficiency roll-off using solution-processed ZnS quantum dots as the electron injection layer.

Abstract

The electron-injecting layer (EIL) is one of the key factors in inverted organic light-emitting diodes (OLEDs) to realize high electroluminescence efficiency. Here, we proposed a novel cathode-modified EIL based on ZnS quantum dots (QDs) in inverted OLEDs, and demonstrated that the device performance was dramatically improved compared to traditional ZnO EIL. The EIL of ZnS QDs may greatly promote the electron injection ability and consequently increase the charge carrier recombination efficiency for the device. We also investigated the effects of different pH values (ZnS-A, pH = 10; ZnS-B, pH = 12) on the properties of ZnS QDs. The best inverted phosphorescent OLED device employing mCP:Ir(ppy)3 as the emission layer showed a low turn-on voltage of 2.9 V and maximum current efficiency of 61.5 cd A−1. Also, the ZnS-A based device exhibits very-low efficiency roll-off of 0.9% and 4.3% at 1000 cd m−2 and 5000 cd m−2, respectively. Our results indicate that use of ZnS QDs is a promising strategy to increase the performance in inverted OLEDs.