Abstract
The fabrication and operating characteristics of lateral grating distributed feedback InP-based quantum cascade lasers emitting at λ∼10μm are reported. High performance, room temperature single mode lasers, utilizing double-sided lateral gratings, are achieved in InP-based material grown by metal organic phase epitaxy. These deeply etched gratings are made possible by the development of a high aspect ratio, multistage, inductively coupled plasma etch process. A threshold current density of ∼5.5kA∕cm2 is measured at room temperature and side mode suppression ratio >20dB with a tuning coefficient of −0.067cm−1K−1 is observed over a temperature range of 190–330K.
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