Abstract
High performance InGaP/GaAs heterojunction bipolar transistors (HBTs) with a maximum DC current gain of > 100 and fmax > 120 GHz (3 × 30 µm2 emitter area) have been developed using production-like processes (4 inch wafers, i-line stepper lithography). The fabricated L-band low voltage (≥ 2 V) power cell HBTs with 12 × 3 × 30 µm2 emitter area have a 1 W output power with > 63% power added efficiency at 3 V operating bias and 2 GHz.
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