Abstract
High-performance, short-cavity, strained-layer InGaAs/GaAlAs laser diodes that are suitable for two-dimensional electronic-photonic integrated circuit (EPIC) applications have been demonstrated. Continuous-wave threshold currents as low as 4 mA, and singlemode output powers in excess of 100 mW (maximum output power: 120 mW) were achieved for as-cleaved, reactive-ion-etched, 3.5 μm-wide, 200 μm-long, InGaAs/GaAlAs ridge-waveguide laser diodes in the junction-side up configuration.
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