Abstract
AbstractInfrared emitters are highly desirable for applications in infrared imaging and stealth technology. Photothermal film emitters, which are driven by light, have garnered considerable interest due to their excellent photothermal properties and ease of fabrication. However, existing photothermal films often suffer from low photothermal conversion efficiency (PCE) and limited array scale. Here, a photothermal film emitter featuring a double‐S microbridge structure is presented, which comprehensively considering the PCE and frame rate. Initially, Si microbridges are fabricated within each microstructure to support the photothermal film. The pattern structure is then arranged into a double‐S configuration to manipulate the thermal conductivity. By optimizing the length and width of the double‐S pattern, high PCE and fast frame rates are achieved. The double‐S microbridge structure photothermal film emitter is fabricated with a 4‐inch diameter, forming an ultra‐large array with over 3000 × 3000 pixels. The absorption and photothermal conversion characteristics are studied, revealing a maximum temperature of 582.70 K and a highest PCE of 16.32%. Time‐dependent photothermal response demonstrated the emitter's rapid heat storage and release capabilities. Additionally, an infrared scene generator is realized. These results position the photothermal film emitter as a promising solution for infrared imaging and dynamic scene generation.
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