Abstract
We report nano-needle structured conductive SnOx (x≤1) as a self-assembled electrode for high-efficiency light trapping in thin-film infrared (IR) photonic devices, benefiting from the high scattering efficiency, high density, and low IR loss of the nano-needles. We demonstrate a 2.2× responsivity enhancement for a 1.5-μm-thick Ge absorber in a nano-needled p(+) SnOx/n-Ge photodiode on Si at λ=1580 nm, in good agreement with theoretical calculation of 2.3× enhancement assuming no IR loss in the nano-needles. Such low-loss light trapping can potentially enable 15-30× absorption enhancement at λ=1600-1650 nm in the Ge layer when integrated with a perfect rear reflector.
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