Abstract
In this paper, a batch microfabrication process is presented for creating high aspect ratio, micron-sized helical and toroidal inductors with Q greater than or equal to 50 at multi-GHz frequencies. With a maximum processing temperature of only 220/spl deg/C, the inductors can be fabricated on top of standard CMOS wafers. This process can also be used to create chiplets, which are polymer-encapsulated inductors with the same form factor as an EIA (Electronics Industries Association) standard 0201 surface mount device. The chiplets can be assembled onto CMOS wafers using a fluidic microassembly technique. This technique allows for multiple electrical interconnects to the inductor chiplets. The 40-/spl mu/m gap between the substrate and assembled inductor increases the Q by a factor of /spl sim/3 compared to as-fabricated inductors. Assembled and as-fabricated inductors have been characterized on similar substrates and have maximum Q values of 50 and 15 with resonant frequencies of 10 GHz and 9 GHz, respectively. Performance of the assembled inductors is nearly comparable to that of inductors as fabricated and tested on quartz substrates.
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