Abstract
High-performance amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) gated by Al2O3/HfO2 stacked dielectric films are investigated. The optimized TFTs with Al2O3 (2.0 nm)/HfO2 (13 nm) stacked gate dielectrics demonstrate the best performance, including low total trap density N t, low subthreshold swing voltage, large switching ratio I ON/OFF, high mobility μ FE, and low operating voltage, equal to 1.35 × 1012 cm−2, 88 mV/dec, 5.24 × 108, 14.2 cm2/V⋅s, and 2.0 V, respectively. Furthermore, a low-voltage-operated resistor-loaded inverter has been fabricated based on such an a-IGZO TFT, showing ideal full swing characteristics and high gain of ∼27 at 3.0 V. These results indicate a-IGZO TFTs gated by optimized Al2O3/HfO2 stacked dielectrics are of great interests for low-power, high performance, and large-area display and emerging electronics.
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