Abstract
Thin-film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) active layer and anodic aluminum oxide (Al2O3) gate dielectric were investigated. The anodic Al2O3 gate dielectric possesses low leakage current and relatively high dielectric constant. The IGZO TFT based on anodic Al2O3 shows a mobility of as high as 21.6 cm2/V·s, an on/off current ratio of as high as 108, and a threshold voltage of only 2 V. Further studies show that the anodic Al2O3 gate dielectric is very compatible with the IGZO semiconductor, and both the channel resistance and contact resistance are lower than those of the TFTs based on thermally grown SiO2 gate dielectric.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
