Abstract
A random network of indium–gallium–zinc oxide (IGZO) nanowires was fabricated by electrospun-polyvinylpyrrolidone (PVP)-nanofiber template transfer. Conventional electrospun nanofibers have been extensively studied owing to their flexibility and inherently high surface-to-volume ratio. However, solution-based IGZO nanofibers have critical issues such as poor electrical properties, reliability, and uniformity. Furthermore, high-temperature calcination, which is essential for vaporizing the polymer matrix, hinders their applications for flexible electronics. Therefore, sputter-based IGZO nanowires were obtained in this study using electrospun PVP nanofibers as an etching mask to overcome the limitations of conventional electrospun IGZO nanofibers. Field-effect transistors (FETs) were fabricated using two types of channels, that is, the nanofiber template-transferred IGZO nanowires and electrospun IGZO nanofibers. A comparison of the transmittance, adhesion, electrical properties, reliability, and uniformity of these two channels in operation revealed that the nanofiber template-transferred IGZO nanowire FETs demonstrated higher transmittance, stronger substrate adhesion, superior electrical performance, and operational reliability and uniformity compared to the electrospun IGZO nanofiber FETs. The proposed IGZO nanowires fabricated by PVP nanofiber template transfer are expected to be a promising channel structure that overcomes the limitations of conventional electrospun IGZO nanofibers.
Highlights
One-dimensional channel structures, such as nanofibers (NFs), nanowires (NWs), and nanorods, have been actively studied for developing advanced semiconductors; they encounter certain physical and technological limitations [1,2]
PVP NFs were electrospun on the indium–gallium–zinc oxide (IGZO) layer and baked at 200 ◦ C for 10 min on a hot plate in air to serve as an etching mask
IGZO NFs and PVP NF template-transferred IGZO NWs, respectively, which indicate that both NFs and NWs had appropriate randomly networked structures
Summary
One-dimensional channel structures, such as nanofibers (NFs), nanowires (NWs), and nanorods, have been actively studied for developing advanced semiconductors; they encounter certain physical and technological limitations [1,2]. Owing to their unique properties such as a large surface-to-volume ratio, high transparency, and high flexibility, semiconductor NWs are considered promising building blocks of electronic, photonic, and biochemical sensors [3,4,5,6]. The PVP NF template transfer method developed in this study lowered the processing temperature, enabling the formation of IGZO NWs on various substrate materials. FET devices were fabricated using the IGZO NWs and NFs as active channels, and their electrical characteristics and long-term reliability were compared
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