Abstract
High performance growth of terahertz quantum cascade lasers (THz QCLs) based on hybrid bound-to-continuum transition and resonant phonon extraction is presented by solid source molecular beam epitaxy. The corresponding accurate control of layer thickness and alloy composition during growth, with precise calibration of the growth rate of Ga and Al by reflection high energy electron diffractometry and high resolution XRD techniques are studied in detail. By utilizing surface plasmon ridge waveguide device structures, the THz QCLs lasing at 3.3 THz with maximum powers of 426 mW at 10 K and 213 mW at 80 K are realized in pulsed mode and the maximum lasing temperature achieves 110 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
