Abstract

We present an all-Heusler architecture which could be used as a rational design scheme for achieving high spin-filter efficiency in the current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. A Co2MnSi/Ni2NiSi/Co2MnSi trilayer stack is chosen as the prototype of such an architecture, of which the electronic structure and magnetotransport properties are systematically investigated by first principles approaches. Well matched energy bands and Fermi surfaces between the all-Heusler electrode-spacer pair are found, which, in combination with the electrode half-metallicity, indicate large bulk and interfacial spin-asymmetry, high spin-filter efficiency, and consequently good magnetoresistance performance. Transport calculations further confirm the superiority of the all-Heusler architecture over the conventional Heusler/transition-metal structure by comparing their transmission coefficients and interfacial resistances of parallel conduction electrons, as well as the macroscopic current-voltage characteristics. We suggest future theoretical and experimental efforts in developing high-performance all-Heusler CPP-GMR junctions for the read heads of the next generation high-density hard disk drives.

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