High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature**Project supported by the National Natural Science Foundation of China (Grant Nos. 61176092 and 61474094), the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), and the National Natural Science Foundation of China–National Research Foundation of Korea Joint Research Project (Grant No. 11311140251).

Abstract

High-performance Ge n+/p junctions were fabricated at a low formation temperature from 325 °C to 400 °C with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n+/p junction has a rectification ratio of 5.6× 104 and a forward current of 387 A/cm2 at −1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.