High-Performance GaN MOSFET With High-$\kappa$$\hbox{LaAlO}_{3}/\hbox{SiO}_{2}$ Gate Dielectric

Abstract

Using a high-κ LaAlO3/SiO2 gate dielectric, the recessed-gate GaN MOSFET has a low threshold voltage (Vt) of 0.1 V, low on-resistance (Ron) of 13.5 Ω·mm, high breakdown voltage of 385 V, high transconductance (gm) of 136 mS/mm, and record-best normalized drive current (μCox) of 172 μA/V2. Such excellent device integrity is due to the small capacitance equivalent thickness of 3.0 nm, using a high-κ gate dielectric and recessed-gate etching.