Abstract
A high-performance GaAs beam-lead Quasi-Mott Schottky barrier mixer diode (patent pending) for the millimeter and submillimeter application has been developed. Typically these devices have a zero-volt bias capacitance in the 0.005 to 0.010 pf range, parasitic capacitance near 0.015 pf, ideality factor near or below 1.06, series inductance below 0.08 nH and a zero-volt bias cutoff frequency in excess of 6000 GHz.
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