Abstract
We report a simultaneous amplified emission from InAs-based self-assembled quantum dot and quantum well in a multistack dot-in-a-well superluminescent light-emitting diode (SLD) for application in broadband sources. A combination of atomic force microscopy, photoluminescence of the test structures, and optoelectronic characterization of SLD is used to obtain an emission bandwidth of ∼292 nm covering O–S communication band (including 850-nm band) and a maximum continuous power of ∼1.33 mW at room temperature.
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