Abstract

Flat-type InGaN-based light-emitting diodes (LEDs) without an n-type contact electrode were developed by using a local breakdown conductive channel (LBCC), and the effect of the In content of the InGaN quantum wells (QWs) on the local breakdown phenomenon was investigated. Electroluminescence and X-ray analyses demonstrated that the homogeneity and crystallinity of the InGaN QWs deteriorated as the In content of the InGaN QWs increased, thereby increasing the reverse leakage current and decreasing the breakdown voltage. After reverse breakdown with a reverse current of several mA, an LBCC was formed on the GaN-based LEDs. The surface size and anisotropic shape of the LBCC increased as the indium content of the InGaN QWs in the LEDs increased. Moreover, a flat-type InGaN LED without an n-type electrode was developed by using the LBCC. Notably, the resistance of the LBCC decreased with increasing indium content in the InGaN QWs, leading to lower resistance and higher light emission of the flat-type InGaN-based LEDs without an n-type contact electrode.

Highlights

  • Flat-type InGaN-based light-emitting diodes (LEDs) without an n-type contact electrode were developed by using a local breakdown conductive channel (LBCC), and the effect of the In content of the InGaN quantum wells (QWs) on the local breakdown phenomenon was investigated

  • We suggest that the emission threshold current of the InGaN-based LEDs with the LBCC can be reduced by decreasing the indium content of the InGaN QWs

  • The series resistance of these LEDs declined in inverse proportion to the indium content of the InGaN QWs, which is consistent with the resistance data for the LBCC in the InGaN-based LEDs with different indium compositions shown in the inset of Fig. 4(a)

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Summary

Variation of the Indium Content of the InGaN QWs

The FWHM of the InGaN 0th peak in the ω/2θ scan increased with higher indium content in the InGaN QWs, as shown in the inset of Fig. 1(b). The FWHM of the InGaN 0th peak increased with the indium content, indicating that the average crystallite size of the InGaN layer increased with higher indium incorporation shown in inset of Fig. 1(b). This observation implies that the crystal defects in the InGaN QWs increase with the indium concentration due to the greater fluctuation of the indium content or lattice mismatch-induced strain.

InGaN QWs with Different Indium Compositions
Contact Electrode
Conclusions
Methods
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