Abstract
Dopant‐free carrier‐selective contacts have attracted considerable research interests, extensively due to the avoidance of high‐temperature doping and their simple, environmental‐friendly fabrication processes for crystalline silicon (c‐Si) solar cells. Herein, a novel dopant‐free electron‐selective material, europium fluoride (EuF x ) is developed. A desired Ohmic contact can be formed between lightly doped n‐type c‐Si and aluminum (Al) by inserting nanoscale EuF x films (2–4 nm) through thermal evaporation so as to avoid the high‐temperature phosphorus diffusion and offer a simple, robust process. The contact resistivity is lower than 20 mΩ cm2. EuF x film can effectively select electrons and block holes at the contact interface, which is attributed to its low work function and a large valence band offset with respect to n‐type c‐Si. Combined with an ultrathin silicon oxide (SiO2) as a passivation layer, a champion power conversion efficiency 21.6% of n‐type c‐Si solar cells with full‐area SiO2/EuF x is achieved. An average of absolute efficiency is increased by 12% compared with the reference. The results show that EuF x has particularly excellent electron‐selective transport performance. The new possibility of using lanthanide salts as electron‐selective contacts for photovoltaic (PV) devices is set up.
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