Abstract
The fabrication of 1.0 /spl mu/m gate length enhancement mode high electron mobility transistors (E-HEMTs) in the lattice matched InAlAs/InGaAs/InP material system is reported. Typical device DC characteristics include a threshold voltage of 275 mV, transconductance of 650 mS/mm, output conductance of 7.0 mS/mm, and an off-state breakdown voltage of 16 V. The devices exhibited excellent RF performance with an f/sub t/ of 35 GHz and an f/sub max/ of 80 GHz. For the first time, a process for E-HEMTs lattice matched to InP suitable for circuit applications is presented.
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