Abstract

InAlAs/InGaAs E (enhancement)- and D (depletion)-HIGFETs (heterostructure insulated-gate FETs) have been integrated on the same wafer using selective ion implantation technology. An extremely high uniformity of threshold voltage has been demonstrated for both devices ( sigma V/sub th/=8 mV/E-mode and 12 mV/D-mode). E/D-mode inverters showed a high DC gain ( approximately 20), while retaining an acceptable value of noise margin of 0.45 V. NAND logic gates have been tested up to 400 MHz, showing functional characteristics. These results suggest the suitability of E/D-mode HIGFETs for high-speed logic circuit applications. >

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