Abstract
We use the leaky electronic state in the continuum concept to create a photovoltaic and photoconductive dual-mode operation superlattice infrared photodetector working at a temperature as high as room temperature. An asymmetric superlattice InGaAs/InAlAs is designed to virtually increase the material band offset and to create a localized state in the continuum with a preferential direction for electron extraction. These two characteristics are responsible for low dark current and high operating temperature of the device. At λp=4.1μm response peak, the highest specific detectivity is 5.7×1010 Jones for +5.0V at 80 K, and at room temperature, it is 1.3×105 Jones for null bias.
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