Abstract
Novel double delta-doped sheet (D3S) Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high-electron-mobility transistors (PHEMTs) have been fabricated successfully and studied. A wide-gap Ga0.51In0.49P Schottky layer and a D3S structure are used to improve device performance. Furthermore, an airbridge-gate structure is employed to achieve good dc and RF performances. For a 1 µm gate length device, a high gate-to-drain breakdown voltage over 35 V, an available output current density up to 615 mA mm-1, a maximum transconductance of 110 mS mm-1 and a high dc gain ratio of 487 are obtained. On the other hand, the maximum values of unity current gain cut-off frequency fT and maximum oscillation frequency fmax are 19.5 and 40.5 GHz, respectively. The output power of 15.6 dB m (363 mW mm-1), power gain of 5.6 dB, power added efficiency (PAE) of 37% and drain efficiency (DE) of 51% are obtained at an input power of 10 dB m and the measured frequency of 2.4 GHz.
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