Abstract
Long-wavelength GaInNAsSb SQW lasers and GaInAsSb SQW lasers that include small amounts of Sb have been successfully grown by gas-source molecular beam epitaxy (GSMBE) and processed into ridge lasers. The GaInNAsSb lasers oscillated under CW operation at 1.258 µm at room temperature. A low CW threshold current of 10.2 mA and high characteristic temperature (T0) of 146 K were obtained for the GaInNAsSb lasers, which is the best result for GaInNAs-based narrow-stripe lasers. Furthermore, the GaInAsSb lasers oscillated under CW operation at 1.20 µm at room temperature. A low CW threshold current of 6.3 mA and high characteristic temperature (T0) of 256 K were obtained for the GaInAsSb lasers, which is also the best result for 1.2 µm-range highly strained GaInAs-based narrow-stripe lasers.
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