Abstract
A novel high performance carrier stored trench bipolar transistor (CSTBT) with a p-type buried layer (PBL-CSTBT) is proposed. The p-type layer of the structure is formed by ion implantation at the bottom of the trench after a partial etching of the P base /N cs layer and the fabrication process is fully compatible with the conventional CSTBT (C-CSTBT) structure. In comparison with the C-CSTBT without a buried layer, the novel structure offers not only high breakdown voltage, but also improved E off -V ce(on) trade-off characteristics.
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