Abstract
In this study, we observe useful properties of V1.1- and V0.8N0.4-bearing copper (Cu) films deposited on barrierless silicon (Si) substrates by a cosputtering process. The Cu98.8(V0.8N0.4), or Cu(VNx) for brevity, films exhibit low resistivity (2.9μΩcm) and minimal leakage current after annealing at temperatures up to 700°C for 1h; no detectable reaction occurs at the Cu/Si interface. These observations confirm the high thermal stability of Cu(VNx) films. Furthermore, since these films have good adhesion features, they can be used for barrierless Cu metallization.
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