High‐performance, coplanar amorphous InGaZnO thin‐film transistors by spray pyrolysis on polyimide substrate for low‐cost manufacturing of foldable active‐matrix organic light emitting diode display

Abstract

AbstractWe report a method for low‐cost deposition of bubble‐free, high‐quality amorphous InGaZnO (a‐IGZO) on polyimide (PI) substrate for foldable active‐matrix organic light emitting diode (AMOLED) display by spray pyrolysis. The coplanar thin‐film transistor (TFT) with spray‐pyrolyzed (SP) a‐IGZO on PI substrate exhibits threshold voltage (VTH) of −0.8 V, saturation mobility of 40.95 cm2 V−1 s−1, and subthreshold swing of 0.18 V per decade with on/off drain current ratio of ~108. The high mobility TFT could be achieved using high substrate temperature (350°C) and low contact resistance by NF3 plasma on the SP a‐IGZO. The TFT shows a ΔVTH of −0.4 V when it is bent on a cylinder of 1‐mm radius. The TFT shows the ΔVTH of +0.05 V for positive bias temperature stress at +20 V at 60°C for 1 h. The ring oscillator made of a‐IGZO TFTs exhibits an oscillation frequency of 2.38 MHz at VDD of 10 V with a propagation delay of 9.13 ns per stage. Therefore, the a‐IGZO TFT by spray pyrolysis could be used for low‐cost, high‐performance, and flexible display TFT backplane.