Abstract
Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm2/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm2/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.
Highlights
Oxide semiconductors have received much attention for a wide range of emerging applications such as flexible screens and wearable electronics [1,2]
The extracted total interface trap density of the SnO thin-film transistor (TFT) was found to 1.03 × 1013 cm−2 ·eV−1, which is typical for SnO TFTs [12,27] but still much higher than the value obtained in the IGZO TFT
Complementary inverters composed of the n-IGZO TFT and the p-SnO TFT were fabricated on Si substrates
Summary
Oxide semiconductors have received much attention for a wide range of emerging applications such as flexible screens and wearable electronics [1,2]. Been realized for SnO TFTs [15], which is comparable to the typical values obtained by n-type oxide Among these techniques, sputtering is more desirable as it is widely used in industries for thin-film semiconductors such as IGZO and ZnO. IGZO for CMOS logic gates because both semiconductors can be deposited by sputtering the industries Their mechanical flexibility and high transparency in the visual region aretechniques, preferable same method widely used in the current electronics industries. The incorporation of IGZO and SnO into with large noise margins, a three-stage IGZO and SnO ring oscillator was fabricated to operate logicwith offers a promising route towards flexible CMOS electronics, such radio-frequency at 2.63 kHz a high output amplitude. A promising route towards flexible CMOS electronics, such as radio-frequency identification tags and fully oxide-based microprocessors
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