Abstract
The application of a submicrometer CMOS/SOS process technology in solid-phase epitaxy and regrowth (SPEAR) material to the fabrication of submicrometer devices and LSI circuits is described. Transistors consistently showed relatively high mobilities and relatively low leakage currents, with threshold voltages near designed values. Inverter propagation delays for an 0.6- mu m ring oscillator measured 85 ps at 2 V and 41 ps at 8 V. Three high-speed LSI circuits were also designed and fabricated using a standard cell approach. Maximum clock frequencies for the 16-b universal shift register, the 8-b multiplexer/demultiplexer, and the variable modulus 10/11 prescaler, fabricated with 1- mu m gate lengths, were 125, 158, and 330 MHz, respectively.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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