Abstract
In this article, we have developed high-k PrTiO 3 gate dielectric poly-Si thin-film transistors (TFTs) prepared under a CF 4 plasma treatment. A high performance TFT device that has a low threshold voltage of 0.77 V, a high effective carrier mobility of 43.2 cm 2 /V s, a small subthreshold swing of 156 mV/decade, and a high I on /I off current ratio of 2.12 × 10 7 can be achieved. This phenomenon is attributed to fluorine atoms in poly-Si films, thus passivating effectively the trap states near the oxide/poly-Si interface. The fluorine incorporation also enhanced the electrical reliability of the PrTiO 3 poly-Si TFT.
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