High‐performance bulk and thin‐film microstrip transmission lines on VLSI‐standard Si substrates

Abstract

AbstractMicrostrip transmission lines with very low power loss of 0.4 dB/mm at 50 GHz have been fabricated on Si substrates using an optimized ion‐implantation process. These devices have the inherent advantages of smaller chip size and better power performance than CPW lines. Using the same approach, high‐performance thin‐film microstrip lines are also developed, showing a loss of 0.9 dB/mm at 20 GHz. This approach is compatible with existing VLSI backend layout technology. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 148–151, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20404