Abstract
High-quality two-dimensional (2D) crystalline boron nitride nanosheets (BNNSs) were grown on silicon wafers by using pulsed plasma beam deposition techniques. Self-powered deep ultraviolet (DUV) photodetectors (PDs) based on BNNSs with Schottky contact structures are designed and fabricated. By connecting the fabricated DUV photodetector to an ammeter, the response strength, response time and recovery time to different DUV wavelengths at different intensities have been characterized using the output short circuit photocurrent without a power supply. Furthermore, effects of temperature and plasma treatment on the induced photocurrent response of detectors have also been investigated. The experimental data clearly indicate that plasma treatment would significantly improve both induced photocurrent and response time. The BNNS-based DUV photodetector is demonstrated to possess excellent performance at a temperature up to 400 °C, including high sensitivity, high signal-to-noise ratio, high spectral selectivity, high speed, and high stability, which is better than almost all reported semiconducting nanomaterial-based self-powered photodetectors.
Highlights
The fabrication of novel deep ultraviolet (DUV) emitters and high-temperature deep-ultraviolet photodetectors have been major challenges in high-performance optoelectronic research
The main focus of wide band gap semiconductor (WBGS) material research for these DUV photodetectors is on oxide (TiO2, ZnO) [12,13], nitride (AlN, GaN, Boron nitride (BN)) [14,15,16], SiC [17], and diamond [18,19] semiconducting materials, as well as various composites, such as AlGaN and InGaN, etc. [20,21] but most of them cannot be operated at extremely high temperatures up to 400 ◦C
All these results suggested that 2D BN nanosheet materials could be more appropriate for applications of high-performance DUV photodetection [1,4,24], capable of having a good selectivity within the UV spectral range and sharp cut-off frequency, combined with the previously-mentioned benefits, such as endurance and chemical inertness
Summary
The fabrication of novel deep ultraviolet (DUV) emitters and high-temperature deep-ultraviolet photodetectors have been major challenges in high-performance optoelectronic research. Experiments from photoluminescence spectral measurements indicated that energy band gaps of BNNSs can vary following their orientations in a wide range, even as low as 3 eV [26] All these results suggested that 2D BN nanosheet materials could be more appropriate for applications of high-performance DUV photodetection [1,4,24], capable of having a good selectivity within the UV spectral range and sharp cut-off frequency, combined with the previously-mentioned benefits, such as endurance and chemical inertness. The present work extends the state-of-the-art in deep UV photodetectors by using the high-quality crystalline BNNSs to build a controllable Schottky barrier for self-powered high-performance (high-sensitivity, high-stability) DUV photodetectors operating at high temperature up to 400 ◦C. Even at a 400 ◦C operating temperature, the newly-fabricated prototypes still display good responsivity, high stability, and excellent repeatability
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