Abstract
A novel low-cost broadband photodetector was fabricated based on nanostructures SnS thin film with cubic crystal structure. The SnS thin film was prepared by means of chemical bath deposition. The photodetector demonstrated a high performance for abroad range light detection from UV to near-infrared. The photoresponse characteristics were tested under illumination of four light emitting diodes (LEDs) distinguished by wavelengths peaks of 380, 530, 750 and 850 nm. The photodetector manifested an excellent reproducibility and fast photoresponse as well as good sensitivity. The values of sensitivity for wavelengths of 380, 530, 750, and 850 nm at a bias voltage of 3 V were found to be approximately 709, 589, 697, and 381 respectively. Moreover, the photodetector showed a low dark current value which enhanced the signal-to-noise ratio as well as low detectability light intensity. Based on the device photoresponse great performance, and in addition to its non-toxic nature and low cost, it can be considered as a promising photoelectronic device effectively applicable over the UV–Vis–NIR range.
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