High‐Performance and Industrially Viable Nanostructured SiOx Layers for Interface Passivation in Thin Film Solar Cells

Abstract

Ultrathin Solar Cells In article number 2000534, José M. V. Cunha and co-workers applied two SiOx passivation architectures in ultrathin CIGS solar cells. Both passivation approaches resulted in devices with a higher performance compared to a reference non-passivated device. The potential to use SiOx as passivation material, deposited by a high throughput industrial technique based in microelectronics processing, yields promising results towards high-performance low-cost ultrathin CIGS solar cells.