High Performance Amorphous Multilayered ZnO-SnO<sub>2</sub> Heterostructure Thin-Film Transistors: Fabrication and Characteristics

Abstract

Multilayered ZnO- heterostructure thin films consisting of ZnO and layers are produced by alternating the pulsed laser ablation of ZnO and targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and layers. The performance parameters of amorphous multilayered ZnO- heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and layers. A highest electron mobility of , a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of are obtained for the amorphous multilayered ZnO(1.5nm)-(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO- heterostructure film consisting of ZnO, , and ZnO- interface layers.