Abstract
The influence of impurities on the a-SiGe film properties was investigated using a super chamber. It was found that a-SiGe films with a low impurity concentration can maintain a high photosensitivity of about 106 for Ge content up to 13%, and impurity incorporation deteriorates film rigidity, which was first deduced from the STM (scanning tunneling microscope) measurement. Using a super chamber method, the highest conversion efficiency of 3.34% was obtained for an a-SiGe single-junction cell under red light (long-wavelength light (>∼650 nm) by filtering AM-1.5, 100 mW/cm2 light). A conversion efficiency of 11.9% was also achieved for a stacked cell of a-Si/a-Si/a-SiGe.
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