High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodized Al x O y

Abstract

In this work, ultrathin AlxOy films used as gate dielectrics in thin-film transistors (TFTs) are prepared in aqueous and organic electrolytes using an anodization process. A series of anodization voltages are used to investigate the effects of anodization electrolyte on the surface morphologies and electrical properties of AlxOy films. By using such anodized AlxOy films as gate dielectrics, 1-V indium–gallium–zinc–oxide (IGZO) TFTs are fabricated. The electrical characteristics of the IGZO TFTs with AlxOy films prepared in organic electrolyte are enhanced in comparison with those of the IGZO TFTs with AlxOy films prepared in aqueous electrolyte. The enhancement may be due to more carbon species introduced to the anodized dielectric films. This work offers a method to further improve the properties of ultrathin anodized dielectrics and shows the potential of using anodization in the future for large-area low-power electronics.